DMN2004K_10 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2004K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V_(BR)DSS
20V
R_DS(ON)
0.55Ω @ V_GS = 4.5V
0.9Ω @ V_GS = 1.8V
I_D
T_A = 25°C
630mA
410mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features and Benefits
• Low On-Resistance: R_DS(ON) = 550_(max)mΩ @ V_GS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2KV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Drain
ESD PROTECTED TO 2kV
SOT-23
Top View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN2004K-7
Case
SOT-23
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Packaging
3000/Tape & Reel
NAB
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
Feb
1
2
2007
U
Mar
3
2008
V
Apr
May
4
5
2009
W
Jun
Jul
6
7
2010
X
Aug
Sep
8
9
2011
Y
Oct
O
2012
Z
Nov
Dec
N
D
DMN2004K
Document number: DS30938 Rev. 5 - 2
1 of 6
www.diodes.com
November 2010
© Diodes Incorporated