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DMN2004DWK_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN2004DWK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Dual N-Channel MOSFET
⢠Low On-Resistance
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠ESD Protected up to 2KV
⢠"Green" Device (Note 4)
⢠Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
⢠Case: SOT-363
⢠Case Material: Molded Plastic, âGreenâ Molding
Compound. UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminal Connections: See Diagram
⢠Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.006 grams (approximate)
CASE
D2
G1
S1
ESD protected up to 2kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
TA = 25°C
TA = 85°C
S2
G2
D1
TOP VIEW
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
Value
20
±8
540
390
1.5
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
200
625
-65 to +150
Units
V
V
mA
A
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
20
â¯
â¯
V
IDSS
â¯
â¯
1
μA
IGSS
â¯
â¯
±1
μA
VGS(th)
0.5
â¯
1.0
V
0.4
0.55
RDS (ON)
â¯
0.5
0.70
Ω
0.7
0.9
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Yfs|
200
â¯
â¯
ms
VSD
0.5
â¯
1.4
V
Ciss
â¯
Coss
â¯
Crss
â¯
â¯
150
pF
â¯
25
pF
â¯
20
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width â¤10μS, Duty Cycle â¤1%.
4. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
1 of 4
www.diodes.com
Test Condition
VGS = 0V, ID = 10μA
VDS = 16V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 16V, VGS = 0V
f = 1.0MHz
November 2007
© Diodes Incorporated
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