DMN2004DWK Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2004DWK
DMN2004DWK
Lead-free Green ^{DUAL N-CHANNEL ENHANCEMENT}
MODE FIELD EFFECT TRANSISTOR
Features
· Dual N-Channel MOSFET
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 2)
· ESD Protected up to 2KV
· "Green" Device (Note 4)
· Qualified to AEC-Q101 standards for High Reliability
A
D₂
G₁
S₁
BC
S₂
G₂
D₁
G
H
K
J
Mechanical Data
· Case: SOT-363
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals Connections: See Diagram
· Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Marking: See Page 2
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approximate)
DF
L
D₂
G₁
S₂
G₂
M
S₁
D₁
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
ESD protected up to 2KV
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
TA = 25°C
T_A = 85°C
VDSS
VGSS
I_D
IDM
Pd
RqJA
T_j, T_STG
20
±8
540
390
1.5
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
A
mW
°C/W
°C
DS30935 Rev. 2 - 2
1 of 4
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DMN2004DWK
ã Diodes Incorporated