DMN2004DMK_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2004DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected up to 2KV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.015 grams (approximate)
SOT-26
D₂
G₁
S₁
ESD protected up 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Characteristic
Steady
State
T_A = 25°C
T_A = 85°C
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±8
540
390
1.5
Units
V
V
mA
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
225
556
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ
BV_DSS
20
⎯
I_DSS
⎯
⎯
I_GSS
⎯
⎯
V_GS(th)
0.5
⎯
0.4
R_{DS (ON)}
⎯
0.5
0.7
|Y_fs|
200
⎯
V_SD
0.5
⎯
C_iss
⎯
⎯
C_oss
⎯
⎯
C_rss
⎯
⎯
Max
⎯
1
±1
1.0
0.55
0.70
0.9
⎯
1.4
150
25
20
Unit
Test Condition
V V_GS = 0V, I_D = 10μA
μA V_DS = 16V, V_GS = 0V
μA V_GS = ±4.5V, V_DS = 0V
V V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 540mA
Ω V_GS = 2.5V, I_D = 500mA
V_GS = 1.8V, I_D = 350mA
ms V_DS =10V, I_D = 0.2A
V V_GS = 0V, I_S = 115mA
pF
pF
V_DS = 16V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated