DMN1033UCB4_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

DMN1033UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V_SSS
12V
R_SS(ON)
26mΩ @ V_GS = 4.5V
I_S
T_A = +25°C
5.5 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R_SS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power
management applications.
Applications
 Battery Management
 Load Switch
 Battery Protection
Features and Benefits
 Built-in G-S protection diode against ESD 2kV HBM.
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: U-WLB1818-4
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Weight: 0.005 grams (approximate)
G1
G2
ESD PROTECTED TO 2kV
Top View
S1
S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1033UCB4-7
Case
U-WLB1818-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2009
W
Jan
Feb
1
2
2010
X
Mar
3
2011
Y
Apr
May
4
5
2012
Z
Jun
Jul
6
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated