DMN100_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Extremely Low On-Resistance: 170mΩ @ V_GS = 4.5V
• High Drain Current: 1.1A
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
SC59
ESD PROTECTED
Top View
DMN100
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SC59
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN100-7-F
Case
SC59
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
M11
M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
2006
Code
T
Month
Jan
Code
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN100
Document number: DS30049 Rev. 9 - 2
1 of 4
www.diodes.com
March 2012
© Diodes Incorporated