DMN100_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Extremely Low On-Resistance: 170mΩ @ V_GS = 4.5V
• High Drain Current: 1.1A
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC-59
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SC-59
Drain
D
TOP VIEW
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Characteristic
Continuous
Continuous
Pulsed
Symbol
V_DSS
V_GSS
I_D
Value
30
±20
1.1
4.0
Units
V
V
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-55 to +150
Notes:
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
mW
K/W
°C
DMN100
Document number: DS30049 Rev. 7 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated