DMN100 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Extremely Low On-Resistance:
170mW @ VGS = 4.5V
· High Drain Current: 1.1A
· Ideal for Notebook Computer, Portable Phone,
PCMCIA Cards, and Battery Powered Circuits
Mechanical Data
· Case: SC-59, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagrams
· Weight: 0.008 grams (approx.)
· Ordering Information, See Sheet 2
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SC-59
Dim Min Max
A
0.30 0.50
B
1.40 1.80
C
2.50 3.00
D
0.85 1.05
E
0.30 0.70
G
1.70 2.10
H
2.70 3.10
M
J
¾ 0.10
K
1.00 1.40
L
0.55 0.70
M
0.10 0.35
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Pulsed
Symbol
V_DSS
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
DMN100
30
±20
± 1.1
± 4.0
500
250
-55 to +150
Units
V
V
A
mW
K/W
°C
Notes: 1. Pulse width £ 300ms, duty cycle £ 2%.
DS30049 Rev. 5 - 2
1 of 3
DMN100