DMG8822UTS_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: TSSOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.039 grams (approximate)
D1
D2
TOP VIEW
BOTTOM VIEW
1
D
D
2
S1
S2
3
S1
S2
4
G1
G2
Top View
Pin Configuration
G1
8
7
6
5
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 2)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
G2
S1
S2
Internal Schematic
Value
Unit
20
V
±8
V
4.9
3.9
A
31
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Symbol
P_D
Value
0.87
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
R_θJA
T_J, T_STG
143
-55 to +150
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
1 of 6
www.diodes.com
June 2009
© Diodes Incorporated