DMG8601UFG Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2KV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMG8601UFG
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.0172 grams (approximate)
5
6
7
8
8
7
6
5
D1/D2
ESD PROTECTED TO 2kV
Top View
Bottom View
G2 S2 G1 S1
4
3
2
1
BOTTOM VIEW
Pin Configuration
1
2
3
4
TOP VIEW
Equivalent Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
ID
6.1
5.2
A
Pulsed Drain Current
IDM
27
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Symbol
PD
Value
0.92
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
RθJA
TJ, TSTG
136
-55 to +150
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMG8601UFG
Document number: DS31788 Rev. 4 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated