DMG6968UTS Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• ESD Protected Up To 2KV
• Qualified to AEC-Q101 Standards for High Reliability
DMG6968UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: TSSOP-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.039 grams (approximate)
D
D
ESD PROTECTED TO 2kV
Top View
Bottom View
1
D
2
S1
3
S1
4
G1
G1
D
8
S2
7
S2
6
G2
5
Top View
Pin Configuration
G2
S1
S2
N-Channel
N-Channel
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG6968UTS-13
Case
TSSOP-8
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
2500 / 13” Tape & Reel
Marking Information
8
5
N6968U
YY WW
1
4
Top View
Logo
Part no
Xth week : 01~52
Year: “09” = 2009
DMG6968UTS
Document number: DS31793 Rev. 4 - 2
1 of 6
www.diodes.com
December 2010
© Diodes Incorporated