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DMG6968UDM_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Gate Charge
• Low RDS(ON):
ƒ 24mΩ @ VGS = 4.5V
ƒ 28mΩ @ VGS = 2.5V
ƒ 34mΩ @ VGS = 1.8V
• Low Input/Output Leakage
• ESD Protected up to 2kV HBM
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMG6968UDM
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT26
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208 e3
• Terminal Connections: See Diagram
• Weight: 0.0008 grams (approximate)
SOT26
S1
G1
D
D
ESD PROTECTED TO 2kV
Top View
D1/D2
D1/D2
S2
G2
Top View
Pin Configuration
G1
G2
S1
S2
N-Channel
N-Channel
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMG6968UDM-7
Case
SOT26
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2N4
2N4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
Mar
2
3
2010
X
Apr
4
2011
Y
May
Jun
5
6
2012
Z
2013
A
Jul
Aug
Sep
7
8
9
2014
B
2015
C
Oct
Nov
Dec
O
N
D
DMG6968UDM
Document number: DS31758 Rev. 5 - 2
1 of 6
www.diodes.com
June 2014
© Diodes Incorporated