DMG6402LDM Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low R_DS(ON)
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 2)
DMG6402LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-26
• Case Material - Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 2
• Ordering Information: See page 2
• Weight: 0.008 grams (approximate)
SOT-26
D
D
S
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Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
T_A = 25°C
T_A = 70°C
D
D
G
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Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±20
5.3
4.2
31
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.12
111
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive Rating, pulse width limited by junction temperature.
Unit
V
V
A
A
Unit
W
°C/W
°C
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
1 of 6
www.diodes.com
July 2009
© Diodes Incorporated