DMG4932LSD Datasheet, PDF (1/9 Pages) Diodes Incorporated – ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temp.
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
• 100% UIS and R_g Tested
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.072 grams (approximate)
D2
Diodes Schottky Integrated MOSFET
D2
G1
S1
G2
S2/D1
S2/D1
S2/D1
Top View
Top View
Internal Schematic
Q1
D₁
Q2
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
Maximum Ratings – Q1 @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AR
Value
30
±12
9.5
7.2
40
13
25.4
Unit
V
V
A
A
A
mJ
Maximum Ratings – Q2 @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AR
Value
30
±25
9.5
7.5
40
13
25.4
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.19
107
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I_AR and E_AR rating are based on low frequency and duty cycles to keep T_J = 25°C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
© Diodes Incorporated