DMG4812SSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V_(BR)DSS
30V
R_DS(on)
15mΩ @ V_GS= 10V
18.5mΩ @ V_GS= 4.5V
I_D max
T_A = 25°C
10.7A
9.6A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R_DS(ON) - minimizes conduction losses
• Low V_SD - reducing the losses due to body diode conduction
• Low Q_rr - lower Q_rr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – I_AR and E_AR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• ESD Protected
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
ESD PROTECTED
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMG4812SSS-13
Case
SO-8
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
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D
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Top View
Internal Schematic
Packaging
2500 / Tape & Reel
Marking Information
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
8
5
G4812SS
YY WW
1
4
Logo
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
1 of 6
www.diodes.com
January 2011
© Diodes Incorporated