DMG4800LFG_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
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DMG4800LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.0172 grams (approximate)
8
7
6
5
5 67 8
D
1
2
3
4
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Internal Schematic
GSS S
4 32 1
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Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Characteristic
Pulsed Drain Current (Note 4)
Steady
State
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±25
7.44
4.82
40
Units
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.94
133
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
1 of 6
www.diodes.com
November 2009
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