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DMG4511SK4 Datasheet, PDF (1/10 Pages) Diodes Incorporated – This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. | |||
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DMG4511SK4
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
35V
-35V
RDS(ON)
35m⦠@ VGS = 10V
45m⦠@ VGS = -10V
ID
TA = 25°C
13A
-12A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
⢠Backlighting
⢠DC-DC Converters
⢠Power management functions
Features and Benefits
⢠Low On-Resistance
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Complementary Pair MOSFET
⢠Lead Free/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: TO252-4L
⢠Case Material: Molded Plastic, âGreenâ Molding Compound. UL
Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram Below
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Weight: 0.328 grams (approximate)
Top View
Bottom View
D2
D1
G2
G1
S2
S1
N-Channel MOSFET P-Channel MOSFET
Ordering Information (Note 3)
Notes:
Part Number
DMG4511SK4-7
Case
TO252-4L
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000 / Tape & Reel
Marking Information
G4511S
YYWW
= Manufacturerâs Marking
G4511S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 â 53)
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
1 of 9
www.diodes.com
July 2011
© Diodes Incorporated
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