DMG4496SSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG4496SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SO-8
TOP VIEW
S
D
S
D
S
D
G
D
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
±25
V
Continuous Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 85°C
I_D
10
6
A
Pulsed Drain Current (Note 4)
I_DM
60
A
Avalanche Current (Notes 4 & 5)
I_AR
8
A
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
E_AR
3.2
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.42
88.49
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1 in.² FR-4 board with 2oz. Copper, in a still air environment @ T_A = 25°C. The value in any given application depends on the
user's specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I_AR and E_AR rating are based on low frequency and duty cycles to keep T_J = 25°C
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
1 of 6
www.diodes.com
April 2010
© Diodes Incorporated