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DMG4468LK3 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
DMG4468LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
⢠Case: TO252-3L
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals Connections: See Diagram
⢠Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 5
⢠Ordering Information: See Page 5
⢠Weight: 0.33 grams (approximate)
D
D
TOP VIEW
D
G
S
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Characteristic
Steady
State
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
9.7
6.3
48
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.68
74.3
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMG4468LK3
Document number: DS31958 Rev. 2 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated
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