DMG4435SSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
Top View
S
D
S
D
S
D
G
D
Top View
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
-30
V
Gate-Source Voltage
V_GSS
±25
V
Continuous Drain Current (Note 3)
Steady State
(V_GS = -4.5)
T_A = 25°C
T_A = 85°C
I_D
-7.3
-4.7
A
Pulsed Drain Current (Note 4)
I_DM
-80
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.3
96.5
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
1 of 6
www.diodes.com
March 2010
© Diodes Incorporated