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DMG3415UFY4_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance
⢠39m⦠@ VGS = -4.5V
⢠52m⦠@ VGS = -2.5V
⢠65m⦠@ VGS = -1.8V
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠ESD Protected Up To 3kV
⢠"Green" Device, Halogen and Antimony Free (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
⢠Case: DFN2015H4-3
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals: Finish ⯠Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Terminals Connections: See Diagram Below
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.008 grams (approximate)
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Continuous Drain Current (Note 4)
Steady
State
Pulsed Drain Current (Note 5)
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
IDM
S
D
G
Internal Schematic
Value
-16
±8
-3.0
-2.4
-5.4
-4.3
-12
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.40
1.61
250.7
77.6
-55 to +150
Unit
W
W
°C/W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, 10μs pulse, pulse duty cycle â¤1%
DMG3415UFY4
Document number: DS31842 Rev. 5 - 2
1 of 6
www.diodes.com
May 2010
© Diodes Incorporated
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