DMG3415UFY4 Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 39mΩ @ V_GS = -4.5V
• 52mΩ @ V_GS = -2.5V
• 65mΩ @ V_GS = -1.8V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 3kV
• "Green" Device, Halogen and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: DFN2015H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
S
D
G
Internal Schematic
Value
-16
±8
-2.5
-2.2
-12
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.49
250.7
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
1 of 6
www.diodes.com
December 2009
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