English
Language : 

DMG3413L Datasheet, PDF (1/6 Pages) Diodes Incorporated – Low On-Resistance
DMG3413L
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
95mΩ @ VGS = -4.5V
130mΩ @ VGS = -2.5V
ID
TA = +25°C
3.0A
2.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
 DC-DC Converters
 Power Management Functions
 Analog Switch
Features and Benefits
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.0072 grams (approximate)
Drain
SOT23
D
Gate
Top View
G
S
Pin Configuration
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG3413L-7
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G33
G33
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
Mar
2
3
2012
Z
Apr
4
2013
A
May
5
G33 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2014
B
Jun
Jul
6
7
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct
Nov
O
N
2018
F
Dec
D
DMG3413L
Document number: DS35051 Rev. 4 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated