DMG3407SSN Datasheet, PDF (1/6 Pages) Diodes Incorporated – Low On-Resistance

DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
-30V
R_DS(ON)
50mΩ @ V_GS = -10V
72mΩ @ V_GS = -4.5V
I_D
T_A = 25°C
-4.0A
-3.3A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load Switch
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SC59
• Case Material – Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Drain
SC59
D
Gate
Top View
Source
Internal Schematic
G
S
Pin Configuration
Ordering Information (Note 3)
Notes:
Part Number
DMG3407SSN-7
Case
SC59
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
G32
G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
Feb
1
2
2011
Y
Mar
3
2012
Z
Apr
May
4
5
2013
A
Jun
Jul
6
7
2014
B
Aug
Sep
8
9
2015
C
Oct
O
2016
D
Nov
Dec
N
D
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
1 of 6
www.diodes.com
April 2012
© Diodes Incorporated