English
Language : 

DMG2301U_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
80mΩ @ VGS = 4.5V
110mΩ @ VGS = 2.5V
ID max
TA = +25°C
-2.7A
-2.1A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
 Backlighting
 Power Management Functions
 DC-DC Converters
 Motor control
SOT23
Gate
DMG2301U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)
Drain
D
G
S
Top View
Source
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG2301U-7
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
G21
G21 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
2011
Y
2012
Z
Mar
Apr
May
3
4
5
2013
A
Jun
6
2014
B
Jul
7
2015
C
Aug
8
2016
D
Sep
Oct
9
O
2017
E
Nov
N
2018
F
Dec
D
DMG2301U
Document number: DS31848 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated