DMG1024UV Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 2KV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG1024UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
D₂
G₁
S₁
ESD PROTECTED TO 2kV
TOP VIEW
BOTTOM VIEW
S₂
G₂
D₁
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Characteristic
Steady
State
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±6
1.38
0.89
3
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Max
530
235
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
mW
°C/W
°C
DMG1024UV
Document number: DS31974 Rev. 5 - 2
1 of 6
www.diodes.com
April 2010
© Diodes Incorporated