DMG1023UV_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features
 Dual P-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 ESD Protected Up To 3KV
 Lead Free By Design/RoHS Compliant (Note 1)
 Halogen and Antimony Free "Green" Device (Note 2)
 Qualified to AEC-Q101 Standards for High Reliability
DMG1023UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
 Case: SOT563
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.006 grams (approximate)
SOT563
D₂
G₁
S₁
ESD PROTECTED TO 3kV
Top View
Bottom View
S₂
G₂
D₁
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMG1023UV-7
DMG1023UV-13
Case
SOT563
SOT563
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1 YM
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
2008
Code
V
Month
Jan
Code
1
2009
W
Feb
2
2010
X
2011
Y
Mar
Apr
May
3
4
5
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
Oct
9
O
2016
D
Nov
N
2017
E
Dec
D
DMG1023UV
Document number: DS31975 Rev. 6 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated