DMG1016V_15 Datasheet, PDF (1/8 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage V_GS(th) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• ESD Protected Gate to 2.5kV HBM
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMG1016V
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 7
• Ordering Information: See Page 7
• Weight: 0.006 grams (approximate)
SOT-563
D₁
G₂
S₂
Q₁
Q₂
ESD PROTECTED TO 2.5kV HBM
TOP VIEW
BOTTOM VIEW
S₁
G₁
D₂
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q₁ @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V_DSS
20
V
Gate-Source Voltage
V_GSS
±6
V
Drain Current (Note 1)
T_A = 25°C
T_A = 85°C
I_D
870
630
mA
Maximum Ratings P-CHANNEL – Q₂ @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V_DSS
-20
V
Gate-Source Voltage
V_GSS
±6
V
Drain Current (Note 1)
T_A = 25°C
T_A = 85°C
I_D
-640
-460
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
530
235
-55 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
mW
°C/W
°C
DMG1016V
Document number: DS31767 Rev. 3 - 2
1 of 8
www.diodes.com
May 2009
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