DMG1013UW_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: SOT-323
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
 Weight: 0.006 grams (approximate)
Drain
D
ESD PROTECTED
Top View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMG1013UW-7
Case
SOT-323
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
PA1
PA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
Shanghai A/T Site
2008
V
Jan
1
2009
W
Feb
Mar
2
3
2010
X
Apr
4
2011
Y
May
Jun
5
6
2012
Z
Jul
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
DMG1013UW
Document number: DS31861 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated