DMG1012T_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
SOT523
ESD PROTECTED TO 2kV
Top View
DMG1012T
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 3)
Part Number
DMG1012T-7
DMG1012TQ-7
Qualification
Commercial
Automotive
Case
SOT523
SOT523
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
3000/Tape & Reel
Marking Information
NA1 YM
NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
Feb
1
2
2010
X
Mar
3
2011
Y
Apr
May
4
5
2012
Z
Jun
Jul
6
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
DMG1012T
Document number: DS31783 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated