DMBT9022 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DMBT9022
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Ideal for Medium Power Amplification and
Switching
· High Current Gain
A
C
Mechanical Data
TOP VIEW
BC
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
B
E
E
D
G
H
· Marking: K1S
K
M
· Weight: 0.008 grams (approx.)
J
L
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_qJA
T_j, T_STG
DMBT9022
50
40
5.0
100
225
556
-55 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Unit
V
V
V
mA
mW
K/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Symbol Min
Max
V(BR)CBO
50
¾
V_(BR)CEO
40
¾
V_(BR)EBO
5.0
¾
I_CBO
¾
500
I_EBO
¾
500
h_FE
270
630
VCE(SAT)
¾
0.4
C_obo 2.0 Typ.
3.5
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
Unit
Test Condition
V
I_C = 50mA, I_E = 0
V
IC = 1.0mA, IB = 0
V
I_E = 50mA, I_C = 0
nA
VCB = 30V
nA
VEB = 4.0V
¾
IC = 1.0mA, VCE = 6.0V
V
IC = 50mA, IB = 5.0mA
pF
VCB = 12V, f = 1.0MHz, IE = 0
DS30056 Rev. 2P-5
1 of 1
DMBT9022