DFLS1200 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SPICE MODEL: DFLS1200
DFLS1200
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PowerDI ^ä123
Features
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· Lead Free Finish, RoHS Compliant (Note 4)
D
H
· "Green" Molding Compound (No Br, Sb)
· Qualified to AEC-Q101 Standards for High Reliability
A
Mechanical Data
B
· Case: PowerDI^ä123
· Case Material: Molded Plastic, "Green" Molding
C
E
Compound. UL Flammability Classification Rating
94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
L
L1
L
· Terminal Connections: Cathode Band
· Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202,
Method 208 e3
· Marking & Type Code Information: See Last Page
E
L2
L4
L3
A
· Ordering Information: See Last Page
· Weight: 0.01 grams (approx.)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
PowerDI^ä123
Dim Min Max Typ
A 3.50 3.90 3.70
B 2.60 3.00 2.80
C 1.63 1.93 1.78
D 0.93 1.00 0.98
E 0.85 1.25 1.00
H 0.15 0.25 0.20
L 0.45 0.85 0.65
L1 —
— 1.35
L2 —
— 1.10
L3 —
— 0.20
L4 0.90 1.30 1.05
All Dimensions in mm
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
200
V
DC Blocking Voltage
VR
RMS Reverse Voltage
V_R(RMS)
141
V
Average Forward Current
IF(AV)
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
40
A
Operating Temperature Range
Tj
-65 to +175
°C
Storage Temperature Range
T_STG
-65 to +175
°C
Thermal Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
Typ
Thermal Resistance Junction to Ambient (Note 1)
R_qJA
132
Thermal Resistance Junction to Soldering Point (Note 2)
RqJS
¾
Max
Unit
¾
°C/W
7
°C/W
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage
Leakage Current (Note 3)
Total Capacitance
Symbol Min
Typ
Max Unit
Test Condition
V(BR)R
200
¾
¾
V IR = 8mA
V_F
¾
¾
0.85
V IF = 1.0A
IR
¾
¾
2
mA VR = 200V, TA = 25°C
C_T
¾
23
¾
pF VR = 5VDC, f = 1MHz
Notes:
1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Theoretical RqJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
3. Short duration pulse test to minimize self-heating effect.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30628 Rev. 3 - 2
PowerDI is a trademark of Diodes Incorporated.
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DFLS1200
ã Diodes Incorporated