DDTC144ELP Datasheet, PDF (1/3 Pages) Diodes Incorporated – PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR

DDTC144ELP
PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DDTA144ELP)
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
3
2_E
C _R1 R2
1_B
DFN1006-3
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
IN
1
R₁
R₂
• Terminal Connections: Collector Dot - See Marking Information
• Terminals: Finish — NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
B
C
OUT
3 _{(or -supply)}
IN ^B
E
2
+ Supply
or GND
• Marking Code N6, Dot denotes Collector Side
Schematic and Pin Configuration
• Ordering Information: See Page 3
• Weight: 0.001 grams (approximate)
1
3
E
C _OUT
(or -supply)
GND (or +supply)
Equivalent Inverter Circuit
Component P/N
DDTC144ELP
R1(NOM)
47K
R2(NOM)
47K
Maximum Ratings @T_A = 25°C unless otherwise specified
Supply Voltage
Input Voltage
Output Current
Characteristic
Symbol
V_CC
V_IN
I_C(max)
Value
50
-10 to +40
100
Unit
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Deration above 25°C
Thermal Resistance, Junction to Ambient Air (Note 3)
Operation and Storage Temperature Range
Symbol
P_D
P_der
R_θJA
T_j, T_STG
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cut Off Current
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency*
* Characteristics of transistor only.
Symbol
Min
Typ
Max Unit
Test Condition
V_(BR)CBO
50
⎯
⎯
V I_C = 10μA, I_E = 0
V_(BR)CEO
50
⎯
⎯
V I_C = 1.0mA, I_BB = 0
I_CBO
⎯
⎯
0.5
μA VCB = 50V, IE = 0
V_I(OFF)
⎯
1.2
0.5
V ^{VCE = 5V, IO = 100μA}
V_I(ON)
3
1.6
⎯
V_O = 0.3V, I_O = 2mA
V_O(ON)
⎯
⎯
0.3
V I_O/I_I = 10mA/0.5mA
I_I
⎯
⎯
0.18
mA V_I = 5V
I_O(OFF)
⎯
⎯
0.5
μA VCC = 50V, VI = 0V
G₁
68
⎯
⎯
⎯ VO = 5V, IO = 5mA
R₁
32.9
47
61.1
kΩ
⎯
R₂/R₁
0.8
1
1.2
⎯
⎯
f_T
⎯
250
⎯
MHz V_CE = 10V, I_E = 5mA, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 3 or Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31245 Rev. 2 - 2
1 of 3
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DDTC144ELP
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