DDTC113TLP Datasheet, PDF (1/3 Pages) Diodes Incorporated – PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR

DDTC113TLP
Features
PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR
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• Epitaxial Planar Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: Collector Dot (See Diagram and
Marking Information)
• Terminals: Finish - NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Code N4, Dot denotes Collector Side
• Ordering Information: See Page 3
• Weight: 0.0009 grams (approx.)
1
3
2
Bottom View
3
2_E
C
1_B
Top View
DFN1006-3
1
1
C3
B
E
10 KÙ
2
Schematic and Pin Configuration
IN ^B
1
C _OUT
E
3
2 ^GND
Equivalent Inverter Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Supply Voltage
Input Voltage
Output Current (I_O)
Characteristic
Symbol
V_CC
V_IN
I_C(max)
Value
50
-5 to +10
100
Unit
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T_A = 25
Power Derating above 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T_A = 25
(Equivalent to one heated junction of NPN)
Operating and Storage Temperature Range
Symbol
P_D
P_der
R_θJA
T_j, T_STG
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Input Resistance
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min Typ Max
V_(BR)CBO
50
V_(BR)CEO
50
V_(BR)EBO
5
I_CBO
⎯
I_EBO
⎯
⎯⎯
⎯⎯
⎯⎯
⎯ 0.5
⎯ 0.5
h_FE
100 380 600
V_CE(SAT)
⎯
⎯ 0.25
R1
0.7
1
1.3
f_T
⎯ 250 ⎯
Unit
V
V
V
μA
μA
⎯
V
KΩ
MHz
Test Condition
I_C = 10μA, I_E = 0
I_C = 1.0mA, I_B = 0
I_E = 50μA, I_C = 0
V_CB = 50V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 5V, I_C = 1mA
I_C = 50mA, I_B = 2.5mA
⎯
V_CE = 10V, I_E = 5mA, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 3 or Diodes Inc. suggested pad layout document
AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30843 Rev. 7 - 2
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DDTC113TLP
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