DDTA114YLP Datasheet, PDF (1/3 Pages) Diodes Incorporated – PRE-BIASED SMALL SIGNAL SURFACE MOUNT PNP TRANSISTOR

DDTA114YLP
Features
PRE-BIASED SMALL SIGNAL SURFACE MOUNT PNP TRANSISTOR
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• Epitaxial Planar Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: Collector Dot (See Diagram and
Marking Information)
• Terminals: Finish — NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.0009 grams (approximate)
1
3
2
Bottom View
3
2_E
C _R1 R2
1_B
Top View
DFN1006-3
IN
1
10kΩ
R₁
R₂
B
47kΩ
C
OUT
3 _{(or -supply)}
E
2
+ Supply
or GND
Schematic and Pin Configuration
IN ^B
1
3
E
C _OUT
(or -supply)
GND (or +supply)
Equivalent Inverter Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Supply Voltage
Input Voltage
Output Current
Output (Collector) Current
Symbol
V_CC
V_IN
I_O
I_c(max)
Value
-50
+6 to -40
-70
-100
Unit
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T_A = 25°C
Power Derating above 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T_A = 25°C
(Equivalent to one heated junction of PNP)
Operating and Storage Temperature Range
Symbol
P_D
P_der
R_θJA
T_j, T_STG
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics: Discrete PNP Transistor (Q1) @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
V_(BR)CBO
-50
⎯
⎯
V I_C = -10μA, I_E = 0
Collector-Emitter Breakdown Voltage
V_(BR)CEO
-50
⎯
⎯
V I_C = -1.0mA, I_B = 0
Collector-Base Cut Off Current
I_CBO
⎯
⎯
-0.1
μA V_CB = -50V, I_E = 0
Collector-Emitter Cut Off Current, I_O(OFF)
I_CEO
⎯
⎯
-0.5
μA V_CB = -50V, I_B = 0
Emitter-Base Cut Off Current
I_EBO
⎯
⎯
-0.2
mA V_EB = 4V, I_C = 0
Input Off Voltage
On Characteristics (Note 4)
V_I(OFF)
⎯
⎯
-0.3
V V_CC = -5V, I_O = -100uA
Input-On Voltage
V_I(ON)
-1.4
⎯
⎯
V V_O = -0.3V, I_O = I_C = 1mA
Input Current
I_I
⎯
⎯
-0.88 mA V_I = -5V
DC Current Gain
h_FE
80
⎯
⎯
⎯ V_CE = -5V, I_C = -5mA
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
-0.25
V I_C = -50mA, I_B = -2.5mA
Output On Voltage
V_O(ON)
⎯
-0.1
-0.3
V I_I = -0.25mA, I_O = -5mA
Input Resistance
R1
7
10
13
KΩ
⎯
Resistance Ratio
(R2/R1)
3.7
4.7
5.7
⎯
⎯
Small Signal Characteristics
Current Gain-Bandwidth Product
f_T
⎯
250
⎯
MHz V_CE = -10V, I_E = -5mA, f = 100 MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 3 or Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect. Pulse width tp<300μS, Duty Cycle, d≤2%.
DS30807 Rev. 5 - 2
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DDTA114YLP
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