DDC144NS_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL NPN PRE-BIASED TRANSISTOR

General Descriptions
• DDC144NS features discrete dual NPN transistors that
can support continuous maximum current up to 100 mA.
It is suited for applications where the load needs to be
turned on and off using circuits like micro-controllers,
comparators, etc., particularly at a point of load. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Figure 2
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.0065 grams (approximate)
DDC144NS
DUAL NPN PRE-BIASED TRANSISTOR
Please click here to visit our online spice models database.
Fig. 1: SOT-363
Fig. 2: Schematic and Pin Configuration
Maximum Ratings, Total Device
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Collector Current
@T_A = 25°C unless otherwise specified
(Note 3)
(Note 3)
Symbol
P_d
R_θJA
T_j, T_STG
I_C(max)
Value
200
625
-55 to +150
100
Unit
mW
°C/W
°C
mA
Maximum Ratings:
Sub-Component Device - Pre-Biased NPN Transistor @T_A = 25°C unless otherwise specified
Supply Voltage
Input Voltage
Output Current
Characteristic
Symbol
Value
Unit
V_cc
50
V
V_in
-10 to +40
V
Io
100
mA
Electrical Characteristics:
Pre-Biased NPN Transistor @T_A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
Symbol Min
Typ
V_I(off)
0.5
1.1
V_I(on)
⎯
1.5
V_O(on)
⎯
0.1
I_I
⎯
⎯
I_O(off)
⎯
⎯
G_I
100
⎯
Δ R1
-30
⎯
R2/R1
-20
⎯
f_T
⎯
250
Max
⎯
3
0.3
0.18
0.5
⎯
+30
+20
⎯
Unit
V
V
V
mA
uA
⎯
%
%
MHz
Test Condition
V_cc = 5V, I_O = 100uA
V_O = 0.3V, I_O = 2mA
I_O/I_I = 10mA/0.5mA
V_I = 5V
V_cc = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
⎯
⎯
V_CE = 10V, I_E = 5mA, f = 100 MHz
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or go to Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
DS30747 Rev. 6 - 2
1 of 4
www.diodes.com
DDC144NS
© Diodes Incorporated