DCX69 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

Features
DCX69/-16/-25
PNP SURFACE MOUNT TRANSISTOR
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• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCX68)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Power
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-25
-20
-5.0
-1.0
-2.0
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air @ T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V_(BR)CBO
-25
⎯
⎯
V I_C = -10μA, I_E = 0
Collector-Emitter Breakdown Voltage
V_(BR)CEO
-20
⎯
⎯
V I_C = -1mA, I_B = 0
Emitter-Base Breakdown Voltage
V_(BR)EBO
-5.0
⎯
⎯
V I_E = -10μA, I_C = 0
Collector-Base Cutoff Current
I_CBO
⎯
⎯
-100
-10
nA _{VCB = -25V, IE = 0}
μA _{VCB = -25V, IE = 0, TA = 150°C}
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
I_EBO
⎯
⎯
-100
nA V_EB = -5.0V, I_C = 0
DCX69, DCX69-16, DCX69-25
50
⎯
⎯
⎯ VCE = -10V, IC = -5.0mA
60
⎯
⎯
⎯ V_CE = -1.0V, I_C = -1.0A
DC Current Gain
DCX69 h_FE
85
⎯
375
⎯ V_CE = -1.0V, I_C = -500mA
DCX69-16
100
⎯
250
⎯ V_CE = -1.0V, I_C = -500mA
DCX69-25
160
⎯
375
⎯ V_CE = -1.0V, I_C = -500mA
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
-0.5
V I_C = -1.0A, I_B = -100mA
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
V_BE(ON)
⎯
⎯
⎯
-0.7
-1.0
V ^{VCE = -10V, IC = -5mA}
V_CE = -1.0V, I_C = -500mA
Current Gain-Bandwidth Product
f_T
40
200
⎯
MHz ^{VCE = -5.0V, IC = -50mA,}
f = 100MHz
Output Capacitance
C_obo
⎯
17
⎯
pF V_CB = -10V, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31264 Rev. 5 - 2
1 of 4
DCX69/-16/-25
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