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DCX68 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR | |||
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Features
⢠Epitaxial Planar Die Construction
⢠Complementary PNP Type Available (DCX69)
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
Mechanical Data
⢠Case: SOT89-3L
⢠Case Material: Molded Plastic, "Greenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.072 grams (approximate)
DCX68/-25
NPN SURFACE MOUNT TRANSISTOR
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SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1B
1
BASE
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
25
20
5.0
1.0
2.0
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
25
â¯
V(BR)CEO
20
â¯
V(BR)EBO
5.0
â¯
â¯
V IC = 100μA, IE = 0
â¯
V IC = 10mA, IB = 0
â¯
V IE = 100μA, IC = 0
Collector-Base Cutoff Current
ICBO
â¯
â¯
0.1
10
μA VCB = 25V, IE = 0
VCB = 25V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
â¯
â¯
10
μA VEB = 5.0V, IC = 0
DC Current Gain
DCX68, DCX68-25
DCX68 hFE
50
60
85
â¯
VCE = 10V, IC = 5.0mA
â¯
â¯
375
⯠VCE = 1.0V, IC = 1.0A
VCE = 1.0V, IC = 500mA
DCX68-25
160
375
VCE = 1.0V, IC = 500mA
Collector-Emitter Saturation Voltage
VCE(SAT)
â¯
â¯
0.5
V IC = 1.0A, IB = 100mA
Base-Emitter Turn-On Voltage
VBE(ON)
â¯
â¯
1.0
V IC = 1.0A, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
â¯
330
â¯
MHz
VCE = 5.0V, IC = 100mA,
f = 100MHz
Output Capacitance
Cobo
â¯
â¯
25
pF VCB = 10V, IE = 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
DS31163 Rev. 4 - 2
1 of 4
www.diodes.com
DCX68/-25
© Diodes Incorporated
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