|
DCX56 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR | |||
|
DCX56/-16
NPN SURFACE MOUNT TRANSISTOR
Features
⢠Epitaxial Planar Die Construction
⢠Complementary PNP Type Available (DCX53)
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
Mechanical Data
⢠Case: SOT89-3L
⢠Case Material: Molded Plastic, "Greenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking & Type Code Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
100
80
5
1
1.5
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Symbol
PD
Tj, TSTG
RθJA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
100
â¯
V(BR)CEO
80
â¯
V(BR)EBO
5.0
â¯
â¯
V IC = 100μA, IE = 0
â¯
V IC = 10mA, IB = 0
â¯
V IE = 10μA, IC = 0
Collector-Base Cutoff Current
ICBO
â¯
â¯
0.1
20
μA VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
â¯
â¯
100
nA VEB = 5.0V, IC = 0
DC Current Gain
DCX56, DCX56-16
DCX56 hFE
63
40
63
â¯
â¯
â¯
⯠IC = 5.0mA, VCE = 2.0V
IC = 500mA, VCE = 2.0V
â¯
250
⯠IC = 150mA, VCE = 2.0V
DCX56-16
100
â¯
250
⯠IC = 150mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
â¯
â¯
0.5
V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage
VBE(ON)
â¯
â¯
1.0
V IC = 500mA, VCE = 2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
â¯
200
â¯
MHz
IC = 50mA, VCE = 5V,
f = 100MHz
Output Capacitance
Cobo
â¯
â¯
15
pF VCB = 10V, IE = 0, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
DS31161 Rev. 3 - 2
1 of 4
www.diodes.com
DCX56/-16
© Diodes Incorporated
|
▷ |