DCP69A-13 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

NOT RECOMMENDED FOR NEW
DESIGNS, USE DCP69/-16
DCP69A/-16
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP68)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD -202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
3
2
1
4
3E
C4
2C
1B
TOP VIEW
COLLECTOR
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Thermal Characteristics
Characteristic
Total Power Dissipation @ T_A = 25ºC (Note 3)
Thermal Resistance, Junction to Ambient Air @ T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
-25
-20
-5.0
-1.0
Value
1
125
-55 to +150
Units
V
V
V
A
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V_(BR)CES -25
—
—
V I_C = -100μA, I_E = 0
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
V_(BR)CEO -20
—
V_(BR)CBO -25
—
—
V I_C = -1.0mA, I_B = 0
—
V I_C = -10μA, I_E = 0
Emitter-Base Breakdown Voltage
V_(BR)EBO -5.0
—
—
V I_E = -10μA, I_C = 0
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
I_CBO
—
I_EBO
—
—
-100 nA V_CB = -25V, I_E = 0
—
-10
μA V_EB = -5.0V, I_C = 0
DC Current Gain
50
—
—
I_C = -5.0mA, V_CE = -10V
DCP69A, DCP69A-16
85
h_FE
40
—
—
375
—
—
I_C = -500mA, V_CE = -1.0V
I_C = -1.0A, V_CE = -1.0V
DCP69A-16
100
—
250
I_C = -500mA, V_CE = -1.0V
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
V_CE(SAT)
—
—
V_{BE (ON)}
—
—
-0.5
V I_C = -1.0A, I_B = -100mA
-0.6
—
V ^{IC = -5mA, VCE = 10V}
—
-1.0
I_C = -1.0A, V_CE = -1.0V
Current Gain-Bandwidth Product
f_T
—
250
—
MHz
I_C = -100mA, V_CE = -5.0V
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle < 2%.
DS31102 Rev. 6 - 3
1 of 4
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DCP69A/-16
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