DCP68 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DCP69)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DCP68/-25
NPN SURFACE MOUNT TRANSISTOR
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3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
25
20
5.0
1.0
Units
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation @ T_A = 25ºC (Note 3)
Thermal Resistance, Junction to Ambient Air @ T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to 150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Typ
Max Unit
Test Condition
V_(BR)CES
25
—
—
V I_C = 100μA, I_E = 0
V_(BR)CEO
20
—
—
V I_C = 1.0mA, I_B = 0
V_(BR)CBO
25
—
—
V I_C = 10μA, I_E = 0
V_(BR)EBO 5.0
—
—
V I_E = 10μA, I_C = 0
I_CBO
—
—
100
nA V_CB = 25V, I_E = 0
I_EBO
—
—
10
μA V_EB = 5.0V, I_C = 0
DCP68, DCP68-25
50
60
DCP68 ^hFE
85
—
—
V_CE = 10V, I_C = 5.0mA
—
—
— ^{VCE = 1.0V, IC = 1.0A}
—
375
V_CE = 1.0V, I_C = 500mA
DCP68-25
160
—
375
V_CE = 1.0V, I_C = 500mA
V_CE(SAT)
—
—
0.5
V I_C = 1.0A, I_B = 100mA
V_{BE (ON)}
—
—
1.0
V V_CE = 1.0V, I_C = 1.0A
f_T
—
330
—
MHz
I_C = 100mA, V_CE = 5.0V
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS30797 Rev. 6 - 2
1 of 4
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DCP68/-25
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