DCP55 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

SPICE MODEL: DCP55 DCP55-16
DCP55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DCP52)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ T_A = 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T_A = 25°C (Note 3)
Symbol
P_d
T_j,T_STG
R_θJA
Value
1 (Note 3)
2 (Note 4)
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V_(BR)CBO
60
⎯
⎯
V I_C = 100μA, I_E = 0A
Collector-Emitter Breakdown Voltage
V_(BR)CEO
60
⎯
⎯
V I_C = 10mA, I_B = 0A
Emitter-Base Breakdown Voltage
V_(BR)EBO
5
⎯
⎯
V I_E = 10μA, I_C = 0A
Collector Cut-Off Current
I_CBO
⎯
⎯
100
nA V_CB = 30V, I_E = 0A
⎯
⎯
20
μA V_CB = 30V, I_E = 0A, T_A = 150°C
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
I_EBO
⎯
⎯
10
μA V_EB = 5V, I_C = 0A
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
0.5
V I_C = 500mA, I_B = 50mA
Base-Emitter Turn-On Voltage
V_BE(ON)
⎯
⎯
1.0
V I_C = 500mA, V_CE = 2V
DC Current Gain
h_FE
DCP55-16
SMALL SIGNAL CHARACTERISTICS
40
25
⎯
250
⎯
I_C = 150mA, V_CE = 2V
⎯ I_C = 500mA, V_CE = 2V
100
⎯
250
I_C = 150mA, V_CE = 2V
Transition Frequency
f_T
⎯
200
⎯
MHz
I_C = 50mA, V_CE = 5V,
f = 100MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm².
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS30707 Rev. 6 - 2
1 of 4
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DCP55/-16
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