DCP54 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DCP51)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
DCP54/-16
NPN SURFACE MOUNT TRANSISTOR
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3
2
1
4
SOT-223
COLLECTOR
3E
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
45
45
5
1
Unit
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T_A = 25°C (Note 3)
Symbol
P_d
T_j, T_STG
R_θJA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol Min
V_(BR)CBO 45
V_(BR)CEO 45
V_(BR)EBO
5
Typ
⎯
⎯
⎯
Collector-Base Cutoff Current
I_CBO
⎯
⎯
Emitter-Base Cutoff Current
On Characteristics (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Small Signal Characteristics
Transition Frequency
I_EBO
⎯
⎯
63
h_FE
63
⎯
40
DCP54-16
100
⎯
V_CE(SAT)
⎯
⎯
V_BE(ON)
⎯
⎯
f_T
⎯
200
Max
⎯
⎯
⎯
100
10
10
⎯
250
⎯
250
500
1
⎯
Unit
Test Condition
V I_C = 100μA
V I_C = 10mA
V I_E = 10μA
nA V_CB = 30V, I_E = 0
μA V_CB = 30V, I_E = 0, T_A = 150°C
μA V_EB = 5V, I_C = 0A
I_C = 5mA, V_CE = 2V
⎯
I_C = 150mA, V_CE = 2V
I_C = 500mA, V_CE = 2V
I_C = 150mA, V_CE = 2V
mV I_C = 500mA, I_B = 50mA
V I_C = 500mA, V_CE = 2V
MHz I_C = 50mA, V_CE = 5V, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%
DS30816 Rev. 5 - 2
1 of 4
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DCP54/-16
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