DCP53 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

DCP53/-16
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP56)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
-100
-80
-5
-1.5
-1
Units
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25ºC (Note 3)
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @ T_A = 25ºC (Note 3)
Symbol
P_d
T_j, T_STG
R_θJA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Typ
Max
Unit
Test Condition
V_(BR)CBO -100
—
—
V I_C = -100μA, I_E = 0
V_(BR)CEO -80
—
—
V I_C = -10mA, I_B = 0
V_(BR)EBO
-5
—
—
V I_E = -10μA, I_C = 0
I_CBO
—
—
-100
-20
nA ^{VCB = -30V, IE = 0}
μA ^{VCB = -30V, IE = 0,}
T_A = 150ºC
I_EBO
—
—
-10
μA V_EB = -5V, I_C = 0
V_CE(SAT)
—
—
-0.5
V I_C = -500mA, I_B = -50mA
V_{BE (ON)}
—
—
-1.0
V I_C = -500mA, V_CE = -2V
h_FE
40
25
—
250
—
I_C = -150mA, V_CE = -2V
— IC = -500mA, VCE = -2V
DCP53-16
100
—
250
I_C = -150mA, V_CE = -2V
f_T
—
200
—
MHz
I_C = -50mA, V_CE = -5V,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DS30794 Rev. 4 - 2
1 of 4
DCP53/-16
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