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DCP52 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR | |||
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DCP52/-16
PNP SURFACE MOUNT TRANSISTOR
Features
⢠Epitaxial Planar Die Construction
⢠Complementary NPN Type Available (DCP55)
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
Mechanical Data
⢠Case: SOT-223
⢠Case Material: Molded Plastic, âGreenâ Molding Compound. UL
Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram
⢠Marking & Type Code Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4
2C
1B
1
BASE
3
EMITTER
TOP VIEW
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-60
-60
-5
-1.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)
Symbol
Pd
Tj,TSTG
RθJA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V(BR)CBO
-60
â¯
V(BR)CEO
-60
â¯
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
â¯
Collector Cut-Off Current
ICBO
â¯
â¯
â¯
â¯
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
IEBO
â¯
â¯
Collector-Emitter Saturation Voltage
VCE(SAT)
â¯
â¯
Base-Emitter Turn-On Voltage
VBE(ON)
â¯
â¯
DC Current Gain
hFE
40
25
â¯
DCP52-16
100
â¯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
â¯
200
Value
1 (Note 3)
2 (Note 4)
-55 to +150
125
Unit
W
°C
°C/W
Max
â¯
â¯
â¯
-100
-20
-10
-0.5
-1.0
250
â¯
250
â¯
Unit
V
V
V
nA
μA
μA
V
V
â¯
MHz
Conditions
IC = -100μA, IE = 0A
IC = -10mA, IB = 0A
IE = -10μA, IC = 0A
VCB = -30V, IE = 0A
VCB = - 30V, IE = 0A, TA = 150°C
VEB = -5V, IC = 0A
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -50mA, VCE = -5V,
f = 100MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm2.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%
DS30708 Rev. 6 - 2
1 of 4
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DCP52/-16
© Diodes Incorporated
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