DCP51 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

DCP51/-16
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP54)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification
Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
3
2
1
4
SOT-223
COLLECTOR
3E
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
-45
-45
-5
-1.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T_A = 25°C (Note 3)
Symbol
P_d
T_j,T_STG
R_θJA
Value
1 (Note 3)
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V_(BR)CBO
-45
⎯
V_(BR)CEO
-45
⎯
Emitter-Base Breakdown Voltage
V_(BR)EBO
-5
⎯
Collector Cut-Off Current
I_CBO
⎯
⎯
⎯
⎯
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
I_EBO
⎯
⎯
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
⎯
Base-Emitter Turn-On Voltage
V_BE(ON)
⎯
⎯
DC Current Gain
h_FE
40
25
⎯
DCP51-16
100
⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f_T
⎯
200
Max
⎯
⎯
⎯
-100
-10
-10
-0.5
-1.0
250
⎯
250
⎯
Unit
V
V
V
nA
μA
μA
V
V
⎯
MHz
Conditions
I_C = -100μA, I_E = 0A
I_C = -10mA, I_B = 0A
I_E = -10μA, I_C = 0A
V_CB = -30V, I_E = 0A
V_CB = - 30V, I_E = 0A, T_A = 150°C
V_EB = -5V, I_C = 0A
I_C = -500mA, I_B = -50mA
I_C = -500mA, V_CE = -2V
I_C = -150mA, V_CE = -2V
I_C = -500mA, V_CE = -2V
I_C = -150mA, V_CE = -2V
I_C = -50mA, V_CE = -5V,
f = 100MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS31196 Rev. 2 - 2
1 of 4
www.diodes.com
DCP51/-16
© Diodes Incorporated