CTA2N1P Datasheet, PDF (1/3 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

CTA2N1P
COMPLEX TRANSISTOR ARRAY
Features
· Combines MMBT4401 type transistor with BSS84 type
MOSFET
· Small Surface Mount Package
· PNP/N-Channel Complement Available: CTA2P1N
Mechanical Data
· Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
· Case material - UL Flammability Rating
Classification 94V-0
· Terminal Connections: See Diagram
· Marking: A03
· Weight: 0.006 grams (approx.)
C_Q1
G_Q2
S_Q2
Q1
A
A03
BC
H
K
J
DF
L
Q2
E_Q1
B_Q1
D_Q2
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾
0.10
M
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
Maximm Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
P_d
RqJA
Tj, TSTG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
600
Unit
V
V
V
mA
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Drain Current
Continuous
Continuous
Symbol
VDSS
V_DGR
VGSS
I_D
Value
-50
-50
±20
-130
Units
V
V
V
mA
DS30295 Rev. A-2
1 of 3
CTA2N1P