BYV28 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

BYV28/50 - BYV28/200
3.0A SUPER-FAST GLASS BODY RECTIFIER
Features
· Hermetically Sealed Glass Body Construction
· Controlled Avalanche Characteristics
· Super-Fast Switching for High Efficiency
· High Current Capability and Low Forward
Voltage Drop
· Surge Overload Rating to 90A Peak
· Low Reverse Leakage Current
Mechanical Data
· Case: SOD-64, Glass
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 1.0 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
A
B
A
C
D
SOD-64
Dim
Min
Max
A
26.0
¾
B
¾
4.2
C
¾
1.35
D
¾
4.3
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ T}j ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Forward Surge Current
Forward Voltage
@ I_F = 5.0A
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_j = 25°C
@ T_j = 165°C
Non-Repetitive Reverse Avalanche Energy
I_R = 0.6A Inductive Load
@ T_j = 175°C
Reverse Recovery Time
(Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
V_RSM
I_O
I_FSM
I_FRM
V_FM
I_RM
E_RSM
t_rr
R_qJA
T_j, T_STG
BYV28/50
50
35
55
BYV28/100 BYV28/150
100
150
70
100
110
165
3.5
90
25
1.1
1.0
150
20
30
25
-65 to +175
Notes: 1.Leads maintained at ambient temperature at a distance of 10mm from the case.
2. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See Figure 4.
BYV28/200 Unit
200
V
140
V
220
V
A
A
A
V
mA
mJ
ns
K/W
°C
DS30033 Rev. A - PRELIMINARY
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BYV28/50 - BYV28/200