BSS84_10 Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish).
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Drain
SOT-23
D
Gate
Top View
Source
Equivalent Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 20KΩ
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Continuous
Continuous
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DM
G
S
Top View
Value
-50
-50
±20
-130
-1.2
Units
V
V
V
mA
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50 ⎯ ⎯ V V_GS = 0V, I_D = -250µA
⎯ ⎯ -15 µA VDS = -50V, VGS = 0V, TJ = 25°C
I_DSS
⎯ ⎯ -60 µA V_DS = -50V, V_GS = 0V, T_J = 125°C
⎯ ⎯ -100 nA V_DS = -25V, V_GS = 0V, T_J = 25°C
I_GSS
⎯ ⎯ ±10 nA V_GS = ±20V, V_DS = 0V
V_GS(th) -0.8 ⎯ -2.0
R_{DS (ON)} ⎯ ⎯ 10
g_FS 0.05 ⎯ ⎯
V V_DS = V_GS, I_D = -1mA
Ω V_GS = -5V, I_D = -0.100A
S V_DS = -25V, I_D = -0.1A
C_iss
C_oss
C_rss
⎯ ⎯ 45 pF
⎯ ⎯ 25 pF V_DS = -25V, V_GS = 0V, f = 1.0MHz
⎯ ⎯ 12 pF
t_D(ON)
t_D(OFF)
⎯ 10 ⎯
⎯ 18 ⎯
ns V_DD = -30V, I_D = -0.27A,
ns R_GEN = 50Ω, V_GS = -10V
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
BSS84
Document number: DS30149 Rev. 14 - 2
1 of 4
www.diodes.com
February 2010
© Diodes Incorporated