BSS84_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: BSS84
BSS84
Lead-free
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Lead Free/RoHS Compliant (Note 3)
· Qualified to AEC-Q101 Standards for High Reliability
A
D
BC
G TOP VIEW S
E
D
G
Mechanical Data
H
· Case: SOT-23
K
M
· Case Material: UL Flammability Classification Rating 94V-0
J
L
· Moisture sensitivity: Level 1 per J-STD-020C
Drain
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish).
· Terminal Connections: See Diagram
· Marking (See Page 2): K84
Gate
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approximate)
Source
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
eristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
V_DSS
VDGR
V_GSS
I_D
P_d
R_qJA
Tj, TSTG
Value
-50
-50
±20
-130
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50
¾
I_DSS
¾
¾
I_GSS
¾
¾
¾
V VGS = 0V, ID = -250µA
¾
-15 ^{µA V}DS ^{= -50V, V}GS ^{= 0V, T}J ^{= 25°C}
¾
-60 µA VDS = -50V, VGS = 0V, TJ = 125°C
¾
-100 nA V_DS = -25V, V_GS = 0V, T_J = 25°C
¾
±10 nA VGS = ±20V, VDS = 0V
V_GS(th) -0.8
¾
-2.0 V VDS = VGS, ID = -1mA
R_{DS (ON)} ¾
¾
10
W VGS = -5V, ID = -0.100A
gFS
0.05
¾
¾
S VDS = -25V, ID = -0.1A
C_iss
¾
¾
45 pF
C_oss
¾
¾
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
C_rss
¾
¾
12 pF
t_D(ON)
¾
10
¾ ns _{VDD = -30V, ID = -0.27A,}
t_D(OFF)
¾
18
¾
ns ^{RGEN = 50W, VGS = -10V}
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30149 Rev. 11 - 2
1 of 3
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BSS84
ã Diodes Incorporated